New Diamond Transistor Breakthrough Targets Power Electronics and UV Sensors
Researchers have created a high-performance p-type transistor using diamond and a perovskite material, achieving rare efficiency and durability at room temperature. The advance addresses a long-standing bottleneck in semiconductor design and opens commercial pathways in power electronics, industrial UV detection, and next-generation computing systems.
Originaltitel: Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor
The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-κ (30.5) SrTiO3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm2/(V·s) to 572 cm2/(V·s)), and high on–off ratio (∼109). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.