Researchers engineer new material for faster, more efficient spintronic chips
Scientists have created a two-dimensional bismuth arsenide layer with exceptional spin-control properties, a breakthrough that could accelerate development of next-generation computing devices. The discovery shows how careful material engineering can unlock new electronic behaviors needed for spintronic applications, where data storage and processing rely on electron spin rather than charge alone.
Originaltitel: Giant Rashba splitting in a 2D BiAs layer on InAs(111)B
Abstract Bismuth-based compounds, such as Bi1 -x Sb x or Bi 2 Te 3 , have outstanding electronic properties especially for advanced quantum devices. However, the potential of low-dimensional group V-Bi materials is largely undetermined. Here, we report the experimental realization of a two-dimensional (2D) BiAs layer with giant Rashba spin splitting, grown on an InAs(111)B substrate via molecular beam epitaxy. ARPES reveals the emergence of a prominent M-shaped band structure and a distinct electron pocket at the Fermi level. DFT, complemented by synchrotron-based XPS, LEED, and STM, confirms strong spin-orbit coupling and a giant Rashba coefficient of these electronic states. An As overlayer, remaining from the fabrication process, preserves a structural shift between substrate and BiAs layer, essential for the Rashba splitting, while preventing undesirable reconstruction. This indicates how well-known capping techniques can stabilize new 2D compounds with interesting electronic structures, especially BiAs, a promising candidate to open possibilities for next-generation spintronic devices and field-effect transistors.